Gate structure and methods thereof

ABSTRACT

A method and structure providing a high-voltage transistor (HVT) including a gate dielectric, where at least part of the gate dielectric is provided within a trench disposed within a substrate. In some aspects, a gate oxide thickness may be controlled by way of a trench depth. By providing the HVT with a gate dielectric formed within a trench, embodiments of the present disclosure provide for the top gate stack surface of the HVT and the top gate stack surface of a low-voltage transistor (LVT), formed on the same substrate, to be substantially co-planar with each other, while providing a thick gate oxide for the HVTs. Further, because the top gate stack surface of HVT and the top gate stack surface of the LVT are substantially co-planar with each other, over polishing of the HVT gate stack can be avoided.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. application Ser. No.15/884,903, filed Jan. 31, 2018, which claims the benefit of U.S.Provisional Application No. 62/527,665, filed Jun. 30, 2017, theentirety of which is incorporated by reference herein.

BACKGROUND

The electronics industry has experienced an ever increasing demand forsmaller and faster electronic devices which are simultaneously able tosupport a greater number of increasingly complex and sophisticatedfunctions. Accordingly, there is a continuing trend in the semiconductorindustry to manufacture low-cost, high-performance, and low-powerintegrated circuits (ICs). Thus far these goals have been achieved inlarge part by scaling down semiconductor IC dimensions (e.g., minimumfeature size) and thereby improving production efficiency and loweringassociated costs. However, such scaling has also introduced increasedcomplexity to the semiconductor manufacturing process. Thus, therealization of continued advances in semiconductor ICs and devices callsfor similar advances in semiconductor manufacturing processes andtechnology.

A particular challenge, and one which has become increasingly difficultfor reduced device geometries, relates to the substrate planarizationrequirements during device fabrication. Chemical mechanical polishing(CMP), a process that serves to remove substrate material and thusplanarize a surface of the substrate, is a process that is usedthroughout the semiconductor industry to address such substrateplanarization requirements. However, in various situations, a CMPprocess alone is inadequate, and in fact could be detrimental, to somesemiconductor substrates that include a variety of semiconductor devicetypes. For example, a semiconductor substrate may in some cases includeboth high-voltage transistors (HVTs) and low-voltage transistors (LVTs).In some cases, the HVTs may be formed within a high-voltage (HV) regionof the substrate, and the LVTs may be formed within a low-voltage (LV)region of the same substrate. In at least some examples, the HVTs have asubstantially thicker gate dielectric than the LVTs. As a result, a topgate stack surface of the HVTs and LVTs may not be co-planar with eachother. Thus, in some cases, a metal gate CMP process that polishes downto a top surface of the shorter LVT gate stack may simultaneously overpolish the HVT gate stack, thereby damaging the HVT gate stack.

Thus, existing processes have not proved entirely satisfactory in allrespects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is perspective view of an embodiment of a transistor deviceaccording to one or more aspects of the present disclosure;

FIG. 2 illustrates a cross-section view of a semiconductor substrateincluding both a high-voltage transistor (HVT) and a low-voltagetransistors (LVT);

FIG. 3 illustrates performing a chemical mechanical polishing (CMP)process to the semiconductor substrate including both the HVT and theLVT of FIG. 2;

FIG. 4 illustrates a cross-section view of a semiconductor substrateincluding both a HVT and LVTs that have a substantially co-planar topsurface, in accordance with some embodiments;

FIG. 5 illustrates a method of fabricating a semiconductor deviceincluding a high-voltage transistor (HVT), according to someembodiments; and

FIGS. 6, 7, 8, 9, 10, 11, and 12 are cross-section views of an exemplarydevice fabricated according to one or more steps of the method of FIG.5.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

It is also noted that the present disclosure presents embodiments whichmay be employed in any of a variety of semiconductor device types. Forexample, embodiments of the present disclosure may be used in planarbulk metal-oxide-semiconductor field-effect transistors (MOSFETs),strained-semiconductor devices, silicon-on-insulator (SOI) devices,partially-depleted SOI devices, fully-depleted SOI devices, or otherdevices as known in the art. In addition, embodiments disclosed hereinmay be employed in the formation of P-type and/or N-type devices. One ofordinary skill may recognize other embodiments of semiconductor devicesthat may benefit from aspects of the present disclosure.

Referring first to the example of FIG. 1, illustrated therein is an MOStransistor 100, providing an example of merely one device type which mayinclude embodiments of the present disclosure. It is understood that theexemplary transistor 100 is not meant to be limiting in any way, andthose of skill in the art will recognize that embodiments of the presentdisclosure may be equally applicable to any of a variety of other devicetypes, such as those described above. The transistor 100 is fabricatedon a substrate 102 and includes a gate stack 104. The substrate 102 maybe a semiconductor substrate such as a silicon substrate. The substrate102 may include various layers, including conductive or insulatinglayers formed on the substrate 102. The substrate 102 may includevarious doping configurations depending on design requirements as isknown in the art. The substrate 102 may also include othersemiconductors such as germanium, silicon carbide (SiC), silicongermanium (SiGe), or diamond. Alternatively, the substrate 102 mayinclude a compound semiconductor and/or an alloy semiconductor. Further,in some embodiments, the substrate 102 may include an epitaxial layer(epi-layer), the substrate 102 may be strained for performanceenhancement, the substrate 102 may include a silicon-on-insulator (SOI)structure, and/or the substrate 102 may have other suitable enhancementfeatures.

The gate stack 104 includes a gate dielectric 106 and a gate electrode108 disposed on the gate dielectric 130. In some embodiments, the gatedielectric 106 may include an interfacial layer such as silicon oxidelayer (SiO₂) or silicon oxynitride (SiON), where such interfacial layermay be formed by chemical oxidation, thermal oxidation, atomic layerdeposition (ALD), chemical vapor deposition (CVD), and/or other suitablemethod. In some examples, the gate dielectric 106 includes a high-kdielectric layer such as hafnium oxide (HfO₂). Alternatively, the high-kdielectric layer may include other high-k dielectrics, such as TiO₂,HfZrO, Ta₂O₃, HfSiO₄, ZrO₂, ZrSiO₂, LaO, AlO, ZrO, TiO, Ta₂O₅, Y₂O₃,SrTiO₃ (STO), BaTiO₃ (BTO), BaZrO, HfZrO, HfLaO, HfSiO, LaSiO, AlSiO,HfTaO, HfTiO, (Ba,Sr)TiO₃ (BST), Al₂O₃, Si₃N₄, oxynitrides (SiON),combinations thereof, or other suitable material. High-K gatedielectrics, as used and described herein, include dielectric materialshaving a high dielectric constant, for example, greater than that ofthermal silicon oxide (˜3.9). In still other embodiments, the gatedielectric 106 may include silicon dioxide or other suitable dielectric.The gate dielectric 106 may be formed by ALD, physical vapor deposition(PVD), CVD, oxidation, and/or other suitable methods. In someembodiments, the gate electrode 108 may be deposited as part of a gatefirst or gate last (e.g., replacement gate) process. In variousembodiments, the gate electrode 108 includes a conductive layer such asW, Ti, TiN, TiAl, TiAlN, Ta, TaN, WN, Re, Ir, Ru, Mo, Al, Cu, Co, CoSi,Ni, NiSi, combinations thereof, and/or other suitable compositions. Insome examples, the gate electrode 108 may include a first metal materialfor an N-type transistor and a second metal material for a P-typetransistor. Thus, the transistor 100 may include a dual work-functionmetal gate configuration. For example, the first metal material (e.g.,for N-type devices) may include metals having a work functionsubstantially aligned with a work function of the substrate conductionband, or at least substantially aligned with a work function of theconduction band of a channel region 114 of the transistor 100.Similarly, the second metal material (e.g., for P-type devices) mayinclude metals having a work function substantially aligned with a workfunction of the substrate valence band, or at least substantiallyaligned with a work function of the valence band of the channel region114 of the transistor 100. Thus, the gate electrode 104 may provide agate electrode for the transistor 100, including both N-type and P-typedevices. In some embodiments, the gate electrode 108 may alternately oradditionally include a polysilicon layer. In various examples, the gateelectrode 108 may be formed using PVD, CVD, electron beam (e-beam)evaporation, and/or other suitable process. In some embodiments,sidewall spacers are formed on sidewalls of the gate stack 104. Suchsidewall spacers may include a dielectric material such as siliconoxide, silicon nitride, silicon carbide, silicon oxynitride, orcombinations thereof.

The transistor 100 further includes a source region 110 and a drainregion 112 each formed within the semiconductor substrate 102, adjacentto and on either side of the gate stack 104. In some embodiments, thesource and drain regions 110, 112 include diffused source/drain regions,ion implanted source/drain regions, epitaxially grown regions, or acombination thereof. The channel region 114 of the transistor 100 isdefined as the region between the source and drain regions 110, 112under the gate dielectric 106, and within the semiconductor substrate102. The channel region 114 has an associated channel length “L” and anassociated channel width “W”. When a bias voltage greater than athreshold voltage (V_(t)) (i.e., turn-on voltage) for the transistor 100is applied to the gate electrode 108 along with a concurrently appliedbias voltage between the source and drain regions 110, 112, an electriccurrent (e.g., a transistor drive current) flows between the source anddrain regions 110, 112 through the channel region 114. The amount ofdrive current developed for a given bias voltage (e.g., applied to thegate electrode 108 or between the source and drain regions 110, 112) isa function of, among others, the mobility of the material used to formthe channel region 114. In some examples, the channel region 114includes silicon (Si) and/or a high-mobility material such as germanium,which may be epitaxially grown, as well as any of the plurality ofcompound semiconductors or alloy semiconductors as known in the art.High-mobility materials include those materials with electron and/orhole mobility greater than silicon (Si), which has an intrinsic electronmobility at room temperature (300 K) of around 1350 cm²/V-s and a holemobility of around 480 cm²/V-s.

In some embodiments, and depending on a particular device type beingfabricated, various aspects of the transistor 100 may be appropriatelymodified (e.g., layer thicknesses, material type, doping configuration,etc.). In addition, some semiconductor substrates may include a varietyof semiconductor device types. Thus, in some cases, a semiconductorsubstrate may include a variety of device types having a variety oflayers thicknesses, material types, doping configurations, etc. Withreference to FIG. 2, and as merely one example, a semiconductorsubstrate 202 may include both high-voltage transistors (HVTs), such asHVT 204, and low-voltage transistors (LVTs), such as LVT 206. In somecases, the HVT 204 may be formed within a high-voltage (HV) region 208of the substrate 202, and the LVT 206 may be formed within a low-voltage(LV) region 210 of the same substrate 202. For purposes of thisdisclosure, the LV region 210 may equally be referred to as a logicregion, and LVTs may be equally referred to as logic transistors.Additionally, in some examples, the LVTs may include core transistors,SRAM transistors, I/O transistors, or other devices that operate byusing a substantially nominal voltage. Thus, in some examples, HVTs mayinclude transistors or other devices operating at voltages higher thanthe LVTs. Additional parameters regarding HVTs and LVTs is described inmore detail below.

In various examples, aspects of the HVT 204 and the LVT 206 may besimilar to the transistor 100, described above. For example, the HVT 204may include a gate stack 212 having a gate dielectric 216 and a metalgate 218, sidewall spacers 220, a source region 222, and a drain region224. In some examples, the gate dielectric 216 may include a firstdielectric layer 226 and a second dielectric layer 228. In some cases,the first dielectric layer 226 may include a silicon oxide layer (SiO₂)or silicon oxynitride (SiON), and the second dielectric layer 228 mayinclude a high-k dielectric layer, as discussed above. Similarly, theLVT 206 may include a gate stack 214 having a gate dielectric 230 and ametal gate 232, sidewall spacers 234, a source region 236, and a drainregion 238. In some examples, the gate dielectric 230 may include afirst dielectric layer 240 and a second dielectric layer 242. In somecases, the first dielectric layer 240 may include a silicon oxide layer(SiO₂) or silicon oxynitride (SiON), and the second dielectric layer 242may include a high-k dielectric layer, as discussed above. As shown inFIG. 2, and in various examples, the HVT 204 has a thicker gatedielectric 216 than the gate dielectric 230 of the LVT 206. As a result,the HVT gate stack 212 is taller than the LVT gate stack 214 (e.g., by adistance ‘D’), and a top gate stack surface of the HVT 204 (e.g.,denoted by dashed line 244) and a top gate stack surface of the LVT 206(e.g., denoted by dashed line 246) are not co-planar with each other.

The difference in height of the HVT gate stack 212 and the LVT gatestack 214 can be particularly troublesome during a chemical mechanicalpolishing (CMP) process, which is a process that serves to removesubstrate material and thereby planarize a top surface of the substrate.Consider the example of FIG. 3, which illustrates performing a CMPprocess 302 that polishes down to the top gate stack surface of theshorter LVT gate stack 214 (e.g., denoted by dashed line 246). In someexamples, the illustrative CMP process may include a metal gate CMPprocess for the LVT gate stack 214. In various cases, polishing down tothe top gate stack surface of the shorter LVT gate stack 214 maysimultaneously over polish the taller HVT gate stack 212, therebydamaging (e.g., schematically illustrated by icon 304) one or both ofthe metal gate 218 and gate dielectric 216, including the high-Kdielectric layer, of the HVT gate stack 212. In some cases, the extentof the damage to the metal gate 218 and the gate dielectric 216 maydepend on the height difference ‘D’ between the HVT gate stack 212 andthe LVT gate stack 214. In some examples, even when trying to minimizeor restrict such CMP damage (e.g., by containing the over polishing tothe metal gate 218), the resulting thickness of the metal gate 218 mayno longer be thick enough, for example, because of the thick underlyinggate dielectric 216. Moreover, thinning of the metal gate 218 by suchover polishing can make work function tuning difficult. Thus, it wouldbe desirable to provide a thick gate oxide, as used in HVTs, while beingable to still fabricate an adequately thick metal gate and prevent overpolishing of HVT gate stacks.

Embodiments of the present disclosure offer advantages over the existingart, though it is understood that other embodiments may offer differentadvantages, not all advantages are necessarily discussed herein, and noparticular advantage is required for all embodiments. For example,embodiments discussed herein include structures and methods of providinga gate dielectric, where at least part of the gate dielectric isprovided within a trench disposed within the substrate. In some aspects,a gate oxide thickness (e.g., of a high-voltage transistor) may becontrolled by way of a trench depth. By providing a HVT with a gatedielectric formed within a trench, embodiments of the present disclosureprovide for the top gate stack surface of HVTs (e.g., the HVT 204) andthe top gate stack surface of the LVTs (e.g., the LVT 206) to besubstantially co-planar with each other, while providing a thick gateoxide for the HVTs. Further, because the top gate stack surface of HVTsand the top gate stack surface of the LVTs are substantially co-planarwith each other, over polishing of HVT gate stacks can be avoided. Insome embodiments, the gate stack thickness of HVTs in an HV region maybe between about 400-750 Angstroms, and the gate stack thickness of LVTsin an LV region may be between about 250-500 Angstroms. In someembodiments, the top gate stack surface of HVTs (e.g., the HVT 204) andthe top gate stack surface of the LVTs (e.g., the LVT 206) are co-planarto within about +/−100 Angstroms of each other. In some examples, in theHV region and thus for the HVTs, a ratio of the thickness of the metalgate to the thickness of the gate stack is between about 50-80%. In someembodiments, in the LV region and thus for the LVTs, a ratio of thethickness of the metal gate to the thickness of the gate stack isbetween about 80-98%. In various cases, one or more of the HVTs in theHV region and the LVTs in the LV region may be electrically connected toeach other. In some embodiments, implementation of the gate dielectrictrench disclosed herein may be accomplished by adding, for example to atleast some existing processes, one additional photomask and oneadditional etch/deposition process. Those skilled in the art willrecognize other benefits and advantages of the methods and devices asdescribed herein, and the embodiments described are not meant to belimiting beyond what is specifically recited in the claims that follow.

With reference now to FIG. 4, illustrated therein is a semiconductorsubstrate 402 including both high-voltage transistors (HVTs) andlow-voltage transistors (LVTs) that have a substantially co-planar topsurface, in accordance with some embodiments. In some embodiments, a HVT404 may be formed within a high-voltage (HV) region 410 of the substrate402, a LVT 406 may be formed within a first low-voltage (LV) region 412of the substrate 402, and a LVT 408 may be formed within a second LVregion 414 of the substrate 402. In various embodiments, the first LVregion 412 and the second LV region 414 may be the same or differentregions, and each of the first LV region 412 and the second LV region414 may include various LVTs such as core transistors, SRAM transistors,I/O transistors, or other devices that operate by using a substantiallynominal voltage. For purposes of the present example, consider that theHVT 404 includes a high-voltage metal-oxide-semiconductor (MOS) device,the LVT 406 includes a core transistor or SRAM transistor, and the LVT408 includes an I/O transistor.

In some examples, certain aspects of the HVT 404, the LVT 406, and theLVT 408 may be similar to the transistor 100, the HVT 204, and the LVT206, described above. However, in accordance with embodiments of thepresent disclosure, the HVT 404 includes a gate dielectric formed withina trench, as described below. In various embodiments, the HVT 404 mayinclude a gate stack 416 having a gate dielectric 422 and a metal gate424, sidewall spacers 426, a source region 428, and a drain region 430.In some examples, the gate dielectric 422 may include a first dielectriclayer 432, a second dielectric layer 434, and a third dielectric layer436. In some embodiments, the first dielectric layer 432 may include ahigh voltage dielectric layer. By way of example, a desired dielectricthickness for the HVT 404 is controlled in large part by a depth ‘Dl’ ofa trench into which material for the first dielectric layer 432 isdeposited. In some embodiments, the first dielectric layer 432 mayinclude a silicon oxide layer (SiO₂), silicon oxynitride (SiON), orother appropriate dielectric layer. In some examples, the seconddielectric layer 434 may similarly include a silicon oxide layer (SiO₂),silicon oxynitride (SiON), or other appropriate dielectric layer.Moreover, in some embodiments, the second dielectric layer 434 may bethe same as the first dielectric layer of the LVT 406 or the LVT 408,discussed below. In various embodiments, the third dielectric layer 436may include a high-k dielectric layer, as discussed above. As discussedwith reference to FIG. 1, a transistor channel region may be defined asthe region between the source and drain regions under the gatedielectric and within the semiconductor substrate. Thus, in someembodiments, because the first dielectric layer 432 extends a depth ‘D1’into the substrate 402, it may be desirable to extend the source region428 and the drain region 430 further into the substrate (e.g., ascompared to the source/drain regions of the LVT 406 and the LVT 408). Insome embodiments, the source region 428 and the drain region 430 mayextend a depth ‘D2’ into the substrate 402, where the depth ‘D2’ isgreater than the depth ‘D1’. In some embodiments, by extending thesource region 428 and the drain region 430 into the substrate 402 to thedepth ‘D2’ greater than the depth ‘D1’, the drive current developed fora given bias voltage for the HVT 404 may be preserved or enhanced.

In some embodiments, the LVT 406 may include a gate stack 418 having agate dielectric 438 and a metal gate 440, sidewall spacers 442, a sourceregion 444, and a drain region 446. In some examples, the gatedielectric 438 may include a first dielectric layer 448 and a seconddielectric layer 450. Similarly, in some examples, the LVT 408 mayinclude a gate stack 420 having a gate dielectric 452 and a metal gate454, sidewall spacers 456, a source region 458, and a drain region 460.In some examples, the gate dielectric 452 may include a first dielectriclayer 462 and a second dielectric layer 464. In some cases, each of thefirst dielectric layers 448 and 462 may include a silicon oxide layer(SiO₂) or silicon oxynitride (SiON), and each of the second dielectriclayers 450 and 464 may include a high-k dielectric layer, as discussedabove. In some embodiments, for example because the LVT 406 includes acore transistor or SRAM transistor and the LVT 408 includes an I/Otransistor, the gate dielectric 452 of the LVT 408 may be thicker thanthe gate dielectric 438 of the LVT 406.

As shown in FIG. 4, and in various embodiments, the HVT 404 has athicker gate dielectric 422 than either the gate dielectric 438 of theLVT 406 or the gate dielectric 452 of the LVT 408. Moreover, by formingthe gate dielectric 422 largely within a trench, a thick gate dielectricand sufficiently thick metal gate may be provided for the HVT 404, whilesimultaneously ensuring that a top gate stack surface of the HVT 404, atop gate stack surface of the LVT 406, and a top gate stack surface ofthe LVT 408 are substantially co-planar with each other (e.g., asdenoted by dashed line 466). In various embodiments, because the topgate stack surface of the HVT 404, the top gate stack surface of the LVT406, and the top gate stack surface of the LVT 408 are substantiallyco-planar with each other, over polishing of HVT gate stack 416 may beavoided. In general, because the top gate stack surfaces of the HVT 404,the LVT 406, and the LVT 408 are substantially co-planar with eachother, an exemplary CMP process 470 that polishes down to the top gatestack surface of the gate stack 416, the gate stack 418, or the gatestack 420 will not over polish any of the other gate stacks. In someexamples, the illustrative CMP process 470 may include a metal gate CMPprocess for the LVT 406 or the LVT 408. Thus, in some embodiments, a CMPprocess that polishes down to a top surface of the metal gate 440 or atop surface of the metal gate 454 will not over polish the gate stack416, but rather a thickness of the metal gate 424 may remainsubstantially unchanged.

In some embodiments, the thickness/height ‘H1’ of the gate stack 416 maybe between about 400-750 Angstroms, the thickness/height ‘H2’ of thegate stack 418 may be between about 250-500 Angstroms, and thethickness/height ‘H3’ of the gate stack 420 may be between about 250-500Angstroms. By way of example, and with reference to the gate stack 416,the thickness of the first dielectric layer 432 may be between about100-200 Angstroms, the thickness of the second dielectric layer 434 maybe between about 20-50 Angstroms, the thickness of the third dielectriclayer 436 may be between about 10-50 Angstroms, and the thickness of themetal gate 424 may be between about 200-500 Angstroms. Thus, in variousembodiments, the ratio between the thickness of the second dielectriclayer 434 and the first dielectric layer 432 may be between about1/10-1/2. With reference to the gate stack 418, the thickness of thefirst dielectric layer 448 may be between about 10-30 Angstroms, thethickness of the second dielectric layer 450 may be between about 10-50Angstroms (and may be same as the third dielectric layer 436), and thethickness of the metal gate 440 may be between about 200-500 Angstroms.Referring to the gate stack 420, the thickness of the first dielectriclayer 462 may be between about 20-50 Angstroms (and may be same as thesecond dielectric layer 434), the thickness of the second dielectriclayer 464 may be between about 10-50 Angstroms (and may be same as thethird dielectric layer 436), and the thickness of the metal gate 454 maybe between about 200-500 Angstroms. In some embodiments, the top gatestack surface of the HVT 404, the top gate stack surface of the LVT 406,and the top gate stack surface of the LVT 408 are co-planar to withinabout +/−100 Angstroms of each other. In some embodiments, and for theHVT 404, a ratio of the thickness of the metal gate 424 to thethickness/height ‘H1’ of the gate stack 416 is between about 50-80%. Insome embodiments, and for the LVT 406, a ratio of the thickness of themetal gate 440 to the thickness/height ‘H2’ of the gate stack 418 isbetween about 80-98%. Similarly, for the LVT 408 and in someembodiments, a ratio of the thickness of the metal gate 454 to thethickness/height ‘H3’ of the gate stack 420 is between about 80-98%. Forpurposes of this disclosure, the thickness/height ‘H1’ of the gate stack416 may be substantially equal to a gate height specification for ahigh-voltage MOS device, the thickness/height ‘H2’ of the gate stack 418may be substantially equal to a gate height specification for a coretransistor or SRAM transistor, and the thickness/height ‘H3’ of the gatestack 420 may be substantially equal to a gate height specification foran I/O transistor. Additionally, and in some embodiments, one or more ofthe HVT 404, the LVT 406, and the LVT 408 may be electrically connectedto each other (e.g., through an electrical interconnect network).

Referring now to FIG. 5, illustrated is a method 500 of fabricating asemiconductor device including a high-voltage transistor (HVT). Themethod 500 may be used to fabricate a gate stack of the HVT, where atleast part of the gate dielectric of the HVT is disposed in a trenchwithin the substrate. In some embodiments, the method 500 may be used tofabricate the device 404, described above with reference to FIG. 4.Moreover, in some embodiments, the method 500 may be used to fabricateHVTs (e.g., such as the HVT 404) on the same substrate as various typesof LVTs, such as the LVT 406 and the LVT 408. Thus, one or more aspectsdiscussed above may also apply to the method 500. Additionally, FIGS.6-12 are cross-section views of an exemplary device 600 fabricatedaccording to one or more steps of the method 500 of FIG. 5.

It is understood that parts of the method 500 of FIG. 5 and/or thesemiconductor device 600 may be fabricated by a well-known complementarymetal-oxide-semiconductor (CMOS) technology process flow, and thus someprocesses are only briefly described herein. Further, the semiconductordevice 600 may include various other devices and features, such asadditional transistors, bipolar junction transistors, resistors,capacitors, diodes, fuses, etc., but is simplified for a betterunderstanding of the inventive concepts of the present disclosure.Further, in some embodiments, the semiconductor device 600 includes aplurality of semiconductor devices (e.g., transistors), which may beinterconnected.

The device 600 fabricated in accordance with embodiments of thisdisclosure may further be an intermediate device fabricated duringprocessing of an integrated circuit, or portion thereof, that maycomprise static random access memory (SRAM) and/or other logic circuits,passive components such as resistors, capacitors, and inductors, andactive components such as P-channel field-effect transistors (PFETs),N-channel FETs (NFETs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), complementary metal-oxide-semiconductor (CMOS)transistors, bipolar transistors, high voltage transistors, highfrequency transistors, other memory cells, and/or combinations thereof.In addition, though the method 500 is described in the context of aMOSFET device, it is understood that the embodiments described hereinmay apply to other structures of transistors including, for example,strained-semiconductor devices, silicon-on-insulator (SOI) devices,partially-depleted SOI devices, fully-depleted SOI devices, or otherdevices as known in the art.

Referring now to the method 500, the method 500 begins at block 502where a substrate is provided and an active region is defined. Referringto the example of FIG. 6, illustrated is a semiconductor device 600including a semiconductor substrate 602 upon which an active region 604has been defined. As used herein, the term “active region” may be usedto define a region in which a transistor (e.g., such as a HVT or a LVT)is formed, for example, as opposed to an isolation region (e.g., ashallow-trench isolation region, a field-oxide region, or otherisolation region) that may be disposed adjacent to an active region orbetween adjacent active regions. In some embodiments, the substrate 602may be substantially similar to the substrate 102 or the substrate 402,discussed above with reference to FIG. 1 and FIG. 4, respectively.

The method 500 proceeds to block 504 where a gate dielectric trench isformed. Referring to the example of FIG. 7, a gate dielectric trench 702is formed within the substrate 602. In various embodiments, the gatedielectric trench 702 may be formed using a photolithography and etchingprocess. By way of example, and in some embodiments, a photoresist layer(resist) may be deposited over the substrate 602, the resist may beexposed to a pattern (e.g., which defines the trench 702), apost-exposure bake process may be performed, and the resist may bedeveloped to form a masking element including a patterned resist layer.In some embodiments, pattering the resist to form the masking elementmay be performed using an electron beam (e-beam) lithography process, anEUV lithography process, an immersion lithography process, or othersuitable lithography process. The masking element (e.g., the patternedresist layer) may then be used to protect regions of the substrate 602while an etch process forms the gate dielectric trench 702 within thesubstrate 602. In various embodiments, the etch process may include adry etch, a wet etch, or a combination thereof. In some embodiments, thetrench may be etched to a depth ‘D1’, as previously discussed. Moreover,in various embodiments, the depth ‘D1’ of the trench 702 may becontrolled (e.g., by controlling the etch process) so as to provide adesired dielectric thickness for the subsequently formed HVT. Statedanother way, in some embodiments, the depth ‘D1’ of the trench 702 isselected so as to provide an adequately thick gate oxide for the HVT. Insome cases, the depth ‘Dl’ of the trench 702 is measured from a planeparallel to a top surface of the substrate 602 (e.g., a non-etchedportion of the substrate 602) to a bottom surface of the trench 702. Insome embodiments, a trench width ‘W1’ (FIG. 8) may also be definedduring the photolithography and etching process. In some examples, thetrench width ‘W1’ may be equal to about a width of a gate stack of theHVT. In some embodiments, the etch process used to form the trench 702may result in sloped sidewalls of the trench 702, such that the trenchhas a width ‘W2’ (FIG. 8) at the bottom of the trench 702, where thewidth ‘W2’ is less than the width ‘W1’.

The method 500 proceeds to block 506 where a first dielectric layer isdeposited and a CMP process is performed. Referring to the example ofFIGS. 7 and 8, a first dielectric layer 802 is deposited over thesubstrate 602 and into the trench 702. In some embodiments, afterdeposition of the first dielectric layer 802, a CMP process is performedto remove excess material of the first dielectric layer 802 and toplanarize a top surface of the device 600. In some embodiments, thefirst dielectric layer 802 may include a silicon oxide layer (SiO₂),silicon oxynitride (SiON), or other appropriate dielectric layer. Insome cases, the first dielectric layer 802 may be similar to the firstdielectric layer 432, discussed above. In some embodiments, after theCMP process, a top surface of the first dielectric layer 802 issubstantially co-planar with a top surface of the substrate 602 (e.g., anon-etched portion of the substrate 602), and a bottom surface of thefirst dielectric layer 802 extends into the substrate 602 by thedistance ‘D1’.

The method 500 proceeds to block 508 where a second dielectric layer anda third dielectric layer are deposited. Referring to the example ofFIGS. 8 and 9, a second dielectric layer 902 is deposited over thesubstrate 602, including over the first dielectric layer 802.Additionally, in various embodiments, a third dielectric layer 904 maybe deposited over the second dielectric layer 902. In some examples, thesecond dielectric layer 902 may include a silicon oxide layer (SiO₂),silicon oxynitride (SiON), or other appropriate dielectric layer. Insome embodiments, the third dielectric layer 904 may include a high-kdielectric layer, as discussed above. In some embodiments, the seconddielectric layer 902 includes a thin dielectric layer (e.g., such asused in a core, SRAM, or I/O transistor, or other LVT). In someembodiments, the third dielectric layer 904 may additionally include aTiN layer, such that the third dielectric layer 904 includes ahigh-k/TiN stack. In some cases, the second dielectric layer 902 may besimilar to the second dielectric layer 434, and the third dielectriclayer 904 may be similar to the third dielectric layer 436, bothdiscussed above. In various embodiments, the first dielectric layer 802,the second dielectric layer 902, and the third dielectric layer 904 mayinclude one or more of the dielectric materials described above withreference to the gate dielectric 106 of the MOS transistor 100.

The method 500 proceeds to block 510 where a polysilicon layer isdeposited. Referring to the example of FIGS. 9 and 10, a polysiliconlayer 1002 is deposited over the third dielectric layer 904. Thereafter,the method 500 proceeds to block 512 where a gate stack is patterned.With reference to the example of FIGS. 10 and 11, a photolithography andetching processes may be performed to pattern a gate stack 1102 of thedevice 600. In some embodiments, the photolithography and etchingprocess is used to form the gate stack 1102 by patterning each of thepolysilicon layer 1002, the third dielectric layer 904, and the seconddielectric layer 902. Thus, the patterned gate stack 1102 may include apatterned polysilicon layer 1002A, a patterned third dielectric layer904A, and a patterned second dielectric layer 902A. In some cases, thepatterning and etching of block 512 is performed so as to align thepatterned gate stack 1102 with (e.g., have a similar width as) thepreviously defined gate dielectric trench 702. Thus, in someembodiments, the patterned gate stack 1102 may have a widthsubstantially equal to the trench width ‘W1’.

The method 500 proceeds to block 514 where sidewall spacers andsource/drain regions are formed, and where a replacement gate process isperformed. Referring to the example of FIG. 12, sidewall spacers 1202are formed. In some embodiments, the sidewall spacers 1202 may include adielectric material such as silicon oxide, silicon nitride, siliconcarbide, silicon oxynitride, or combinations thereof. In someembodiments, the sidewall spacers 1202 include multiple layers, such asmain spacer walls, liner layers, and the like. As also illustrated inthe example of FIG. 12, a source region 1204 and a drain region 1206 areformed within the substrate 602 and on either side of gate stack 1208.In addition, the source region 1204 and the drain region 1206 are formedwithin the substrate 602 and on either side of the trench 702 includingthe first dielectric layer 802. In various embodiments, the sourceregion 1204 and the drain region 1206 may include diffused source/drainregions, ion implanted source/drain regions, epitaxially grown regions,or a combination thereof. In a further embodiment of block 514, and withreference to FIGS. 11 and 12, a replacement gate process is performed.In the replacement gate process, the patterned polysilicon layer 1002Amay be removed (e.g., by a selective wet etch or a selective dry etch)and a metal gate layer 1210 may then be deposited over the patternedthird dielectric layer 904A. In some embodiments, the metal gate layer1210 includes a conductive layer such as W, Ti, TiN, TiAl, TiAlN, Ta,TaN, WN, Re, Ir, Ru, Mo, Al, Cu, Co, CoSi, Ni, NiSi, combinationsthereof, and/or other suitable compositions. In some examples, the metalgate layer 1210 may include a first metal material for an N-type device600 and a second metal material for a P-type device 600. It is alsonoted that in some embodiments, the sidewall spacers 1202 may be formedon sidewalls of the patterned gate stack 1102 (FIG. 11) prior toperforming the replacement gate process.

Similar to the discussion of FIG. 4, and with reference to FIG. 12,because the first dielectric layer 802 extends a depth ‘D1’ into thesubstrate 602, it may be desirable to extend the source region 1204 andthe drain region 1206 further into the substrate. Thus, in someembodiments, the source region 1204 and the drain region 1206 may extenda depth ‘D2’ into the substrate 602, where the depth ‘D2’ is greaterthan the depth ‘D1’. In various embodiments, by extending the sourceregion 1204 and the drain region 1206 into the substrate 602 to thedepth ‘D2’ greater than the depth ‘D1’, the drive current developed fora given bias voltage for the device 600 may be preserved or enhanced. Itis also noted that because embodiments of the present disclosure providefor the thick gate oxide (the first dielectric layer 802) of the HVTdevice 600 to be buried within the trench 702, a top surface of the gatestack 1208 is effectively lowered. As a result, embodiments of thepresent disclosure provide for a top gate stack surface of the HVTs andLVTs to be substantially co-planar with each other, while providing athick gate oxide for the HVTs (e.g., as shown in FIG. 4).

The semiconductor device 600 may undergo further processing to formvarious features and regions known in the art. For example, subsequentprocessing may form various contacts/vias/lines and multilayersinterconnect features (e.g., metal layers and interlayer dielectrics) onthe substrate, configured to connect the various features to form afunctional circuit that may include one or more transistor devices. Infurtherance of the example, a multilayer interconnection may includevertical interconnects, such as vias or contacts, and horizontalinterconnects, such as metal lines. The various interconnection featuresmay employ various conductive materials including copper, tungsten,and/or silicide. In one example, a damascene and/or dual damasceneprocess is used to form a copper related multilayer interconnectionstructure. Moreover, additional process steps may be implemented before,during, and after the method 500, and some process steps described abovemay be replaced or eliminated in accordance with various embodiments ofthe method 500.

The various embodiments described herein offer several advantages overthe existing art. It will be understood that not all advantages havebeen necessarily discussed herein, no particular advantage is requiredfor all embodiments, and other embodiments may offer differentadvantages. For example, embodiments discussed herein include structuresand methods of providing a gate dielectric, where at least part of thegate dielectric is provided within a trench disposed within thesubstrate. In some aspects, a gate oxide thickness (e.g., of ahigh-voltage transistor) may be controlled by way of a trench depth. Byproviding a HVT with a gate dielectric formed within a trench,embodiments of the present disclosure provide for the top gate stacksurface of HVTs and the top gate stack surface of the LVTs to besubstantially co-planar with each other, while providing a thick gateoxide for the HVTs. Further, because the top gate stack surface of HVTsand the top gate stack surface of the LVTs are substantially co-planarwith each other, over polishing of HVT gate stacks can be avoided.

Thus, one of the embodiments of the present disclosure described amethod for fabricating a semiconductor device including forming a gatedielectric trench within a substrate and depositing a first dielectriclayer within the gate dielectric trench. In some embodiments, a topsurface of the first dielectric layer is co-planar with a top surface ofthe substrate. Thereafter, in some examples, a second dielectric layeris formed over the first dielectric layer. In some embodiments, a metalgate is then formed over the second dielectric layer.

In another of the embodiments, discussed is a method where a firsttransistor is formed within a first region of a substrate. In someembodiments, the first transistor includes a first gate stack having afirst height. In various examples, a second transistor is formed withina second region of the substrate. In some embodiments, the secondtransistor includes a second gate stack having a second height less thanthe first height. In some cases, a top surface of the first gate stackis substantially co-planar with a top surface of the second gate stack.

In yet another of the embodiments, discussed is a semiconductor deviceincluding a substrate having a gate dielectric trench and a firstdielectric layer formed within the gate dielectric trench. In someembodiments, a top surface of the first dielectric layer is co-planarwith a top surface of the substrate. In various examples, a seconddielectric layer is disposed over the first dielectric layer, and ametal gate is disposed over the second dielectric layer. In some cases,the first dielectric layer and the second dielectric layer provide agate oxide of the semiconductor device.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A device, comprising: a substrate including afirst substrate region and a second substrate region different than thefirst substrate region, wherein the first substrate region and thesecond substrate region are both free of any shallow trench isolationfeature; a first transistor disposed within the first substrate region,wherein the first transistor includes a first gate stack having a firstheight, and wherein the first gate stack includes a first metal gatelayer having a first thickness; and a second transistor disposed withinthe second substrate region, wherein the second transistor includes asecond gate stack having a second height less than the first height, andwherein the second gate stack includes a second metal gate layer havinga second thickness substantially equal to the first thickness of thefirst metal gate layer; wherein a top surface of the first gate stack issubstantially level with a top surface of the second gate stack.
 2. Thedevice of claim 1, wherein the first substrate region includes a trench,wherein the first gate stack includes a gate dielectric, and wherein atleast part of the gate dielectric is disposed within the trench.
 3. Thedevice of claim 1, wherein the first transistor includes a high-voltagetransistor (HVT), and wherein the second transistor includes alow-voltage transistor (LVT).
 4. The device of claim 1, wherein a ratioof the first thickness of the first metal gate layer to the first heightof the first gate stack is in a range of about 50-80%.
 5. The device ofclaim 1, wherein a ratio of the second thickness of the second metalgate layer to the second height of the second gate stack is greater thanabout 80%.
 6. A semiconductor device, comprising: a high-voltagetransistor (HVT) disposed within a first region of a substrate, whereinthe HVT includes a first gate stack having a first height; a firstlow-voltage transistor (LVT) within a second region of the substrate,wherein the first LVT includes a second gate stack having a secondheight less than the first height; and a second LVT within a thirdregion of the substrate, wherein the second LVT includes a third gatestack having a third height less than the first height; wherein thefirst region of the substrate, the second region of the substrate, andthe third region of the substrate are each free of any shallow trenchisolation feature; and wherein top surfaces of each of the first gatestack, the second gate stack, and the third gate stack are substantiallylevel with each other.
 7. The semiconductor device of claim 6, whereinthe first region of the substrate includes a trench, wherein the firstgate stack includes a first gate dielectric, and wherein at least partof the first gate dielectric is disposed within the trench.
 8. Thesemiconductor device of claim 7, wherein a top surface of the first gatedielectric is level with a top surface of the substrate.
 9. Thesemiconductor device of claim 7, further including a source region and adrain region formed within the first region and on either side of thetrench, wherein the trench has a first depth, and wherein the sourceregion and the drain region extend into the substrate a second depthgreater than the first depth.
 10. The semiconductor device of claim 7,wherein the trench has a first width along a plane parallel to a topsurface of the substrate, wherein the trench has a second width along aplane parallel to a bottom surface of the trench, and wherein the secondwidth is less than the first width.
 11. A semiconductor device,comprising: a first transistor disposed within a high-voltage region ofa substrate, wherein the first transistor includes a first gate stackhaving a first height, wherein the high-voltage region includes atrench, wherein the first gate stack includes a first gate dielectricportion disposed within the trench, and wherein the first gate stackincludes a second gate dielectric portion that extends above the trench;a second transistor disposed within a low-voltage region of thesubstrate, wherein the second transistor includes a second gate stackhaving a second height less than the first height; and first source anddrain regions disposed within the high-voltage region and on either sideof the trench, wherein the trench has a first depth, and wherein thefirst source and drain regions extend into the substrate a second depthgreater than the first depth; wherein the high-voltage region and thelow-voltage region are each free of any shallow trench isolationfeature; and wherein a top surface of the first gate stack issubstantially level with a top surface of the second gate stack.
 12. Thesemiconductor device of claim 11, wherein the first gate dielectricportion disposed within the trench includes a silicon oxide layer or asilicon oxynitride layer, and wherein the second gate dielectric portionthat extends above the trench includes a high-K dielectric layer. 13.The semiconductor device of claim 12, wherein a thickness of the siliconoxide layer or the silicon oxynitride layer is substantially equal tothe first depth of the trench.
 14. The semiconductor device of claim 11,further comprising second source and drain regions disposed with thelow-voltage region and on either side of the second gate stack, whereinthe second source and drain regions extend into the substrate a thirddepth less than both the first depth and the second depth.
 15. Thesemiconductor device of claim 11, wherein the first transistor includesa high-voltage transistor, and wherein the second transistor includesone of a logic transistor, a static random access memory (SRAM)transistor, and an input/output (I/O) transistor.
 16. The semiconductordevice of claim 11, wherein the trench has a first width along a planeparallel to the top surface of the substrate, and wherein the trench hasa second width different than the first width along a plane parallel toa bottom surface of the trench.
 17. The semiconductor device of claim16, wherein the second width is less than the first width.
 18. Thesemiconductor device of claim 11, wherein the first gate stack includesa first metal gate layer having a first thickness, and wherein thesecond gate stack includes a second metal gate layer having a secondthickness substantially equal to the first thickness of the first metalgate layer.
 19. The device of claim 3, wherein the LVT includes one of alogic transistor, a static random access memory (SRAM) transistor, andan input/output (I/O) transistor.
 20. The semiconductor device of claim6, wherein the first LVT has a first gate dielectric having a firstthickness, and wherein the second LVT has a second gate dielectrichaving a second thickness different than the first thickness.